data books, etc. contact sharp in order to obtain the latest version of the device specification sheets before using any sharp 's device. in the absence of confirmation by device specification sheets, sharp takes no responsibility for any defects that occur in equi pment using any of sharp's devices, shown in catalogs, PD49PI/pd481pi PD49PI/pd481pi symbol rating unit v r 32 v p 150 mw t opr - 25 to + 85 ?c t stg - 40 to + 100 ?c t sol 260 ?c parameter current PD49PI pd481pi temperature coefficient dark current dark current temperature coefficient terminal capacitance peak sensitivity wavelength PD49PI pd481pi symbol i sc b t i d t c t l p min. typ. max. 2.4 3 - 3.5 5 - - 0.2 - -130 - - 3.5 5 -2050 -- 910 960 unit m a % /?c na times/10?c pf nm parameter reverse voltage power dissipation operating temperature storage temperature *1 soldering temperature n features 1. high sensitivity 2. peak sensitivity wavelength matching 3. built-in visible light cut-off filter n applications *for 10 seconds at the position of 2.3mm from the bottom face of resin package with infrared led vcrs, audio equipment and air condi- tioners, etc. *2 e v : illuminance by cie standard light source a ( tungsten lamp ) *2 short circuit *2 short circuit current 7.3 ( chip location ) 0.9 0.9 0.5 0.5 0.3 1.3 2.7 0.2 1.4 0.5 n outline dimensions ( unit : mm ) conditions e v e v v r = 10v v r = 10v v r = 3v, f= 1mhz n electro-optical characteristics ( ta = 25?c ) photodiode rest of gate ( l p= 1000nm: PD49PI ) ( l p= 960nm: pd481pi ) ( i sc v pd481pi ) n absolute maximum ratings ( ta = 25?c ) 1 2 1 anode 2 cathode 1 2 black epoxy resin ( visible light cut-off type ) center high speed, high sensitivity >=3.5 m a at e detector 1. infrared remote controllers for tvs, = 100lx: = 100lx = 100lx 1 000 1 010 a 7.0 0.2 7.6 0.2 0.4 max. 1.3 max. 1.3 max. 5.08 0.1 13.0 1.0
PD49PI/pd481pi 0 -25 50 100 150 200 0 25 50 75 100 -25 0 25 50 75 100 0.05 0.1 0.2 0.5 1 2 5 10 20 50 0 10 20 30 40 50 60 - 25 0 25 50 75 100 0 20 40 60 80 100 120 140 160 85 f = 1mhz a 5 2 5 2 5 2 5 2 600 100 90 80 70 60 50 40 30 20 10 0 pd49pl pd481pl fig. 2 spectral sensitivity 700 800 900 relative sensitivity ( % ) wavelength l ( nm ) t a = 25?c fig .1 power dissipation vs. ambient temperature power dissipation p ( mw ) fig. 3 dark current vs. dark current i d ( a ) ambient temperature t a ( ?c ) 10 -6 10 -7 10 -8 10 -9 10 -10 10 -11 10 -12 v r = 10v 10 -7 10 -8 10 -9 10 -10 10 -11 dark current i d reverse voltage v r 5 52 5 2 25 25 t a = 25?c terminal capacitance c t ( pf ) reverse voltage v r ( test circuit ) pd481pl ambient temperature t a ( ?c ) relative output ( % ) ambient temperature fig. 4 dark current vs. reverse voltage ambient temperature t a ( ?c ) fig. 6 relative output vs. ambient temperature fig. 5 terminal capacitance vs. reverse voltage ( a ) 10 -2 10 -1 ( v ) ( v ) pd49pl gl537 gl538 distance between infrared light emitting diode and photodiode shall be fixed i sc = 100 m a at i f = 20ma and t a = 25?c t a = 25?c 1000 1100 1200 10 1 ( emitter : gl537/gl538,detector : PD49PI/pd481pi )
PD49PI/pd481pi test circuit for responce time 2 5 2 5 2 5 relative output ( % ) angular displacement q 0 - 90? - 80? - 70? - 60? - 50? - 40? -20? -10? - 30? 0 +10? +20? + 30? + 40? + 60? + 50? + 70? + 80? + 90? 100 20 40 60 80 2 5 2 5 2 5 2 5 2 5 input output laser diode pulse generator output 10v + pd481pi 90 % 10 % relative radiant intensity ( % ) fig. 7 sensitivity diagram v r = 10v t a = 25?c 10 2 10 10 0 10 -1 10 -2 10 10 2 10 3 10 4 10 5 l ( w ) i out = 0.1ma PD49PI/ t r t f r l fig. 8 relative output vs. distance ( t a = 25?c ) responce time t r , t f ( m s ) ( emitter:gl537/gl538 0.1 1 10 100 gl538 10 -4 10 -3 10 -2 10 -1 gl537 i f = 20ma t a = 25?c distance between emitter and detector d ( mm ) l please refer to the chapter precautions for use. detector : PD49PI/ pd481pi ) fig. 9 responce time vs. load resistance load resistance r
|
